IXYS Corporation
IXYS Corporation

- IXYS Corporation tarjoaa laajan valikoiman High Power Semiconductors, mukaan lukien alhainen resistanssi teho MOSFET, erittäin nopea kytkentä IGBT, Fast Recovery Diodes (FRED), SCR ja Diodimoduulit, tasasuuntaajan siltoja ja Power Interface ICs.

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Part Number

Description

ECAD
Model

Quote

MOSFET N-CH 500V 12A TO247

MOSFET P-CH 500V 40A PLUS247

MOSFET P-CH 50V 32A TO-263

DIODE MODULE 600V 50A SOT227B

THYRISTOR PHASE TO220

MOSFET N-CH 800V 10A TO-263

IGBT 1700V 32A 190W TO247AD

DIODE GEN PURP 1.2KV 17A TO220AC

IGBT FAST 600V 200A SOT-227B

MOSFET N-CH 150V 67A ISOPLUS247

MOSFET N-CH 100V 170A TO-268

IC MOSFET DRVR DUAL 2A 8-SOIC

THYRISTOR MOD 1600V 2X138A

DIODE ARRAY GP 1200V 45A TO247AD

MOSFET N-CH 100V 16A TO-247

MOSFET N-CH 200V 100A SOT-227

IGBT 600V 40A 150W TO268

MOSFET N-CH 600V 30A TO-247

MOSFET N-CH 75V 220A TO-3P

DIODE AVALANCHE 1.6KV 49A DO203

MOSFET N-CH 100V 133A ISOPLUS247

MOSFET N-CH 150V 160A TO-247

MOSFET N-CH 300V 120A TO-264

MOSFET N-CH 600V 20A TO220AB

MOSFET N-CH 1200V 1.4A TO-252

MOSFET N-CH 500V 0.2A DPAK

MOSFET N-CH 1200V 26A PLUS247

BRIDGE RECT 3 PHASE 1600V 54A

MOSFET N-CH 650V 4A X2 TO-252

MOSFET N-CH 100V 80A TO-263

MOSFET N-CH 100V 130A TO-263

IGBT 1200V 30A 150W TO247AD

IGBT 1400V 60A 300W PLUS247

MOSFET N-CH 200V 90A PLUS247

MOD THYRISTOR DUAL 1600V TO240AA

DIODE BRIDGE 31A 1200V AVAL FO-A

DIODE ARRAY GP 1200V 10A TO263AB

RECT BRIDGE 3PH 25A 1800V V1-A

MOSFET N-CH 300V 140A TO-264

MOSFET N-CH 500V 30A TO-268

IGBT 1700V 10A 140W TO268

MOD THYRISTOR/DIO 1600V TO-240AA

MOSFET N-CH 100V 160A TO-263

MOSFET N-CH 250V 60A TO220AB

2500V TO 4500V VERY HI VOLT PWR

1700V/58A HIGH VOLTAGE XPT IGBT,

IC DRVR HALF BRIDGE GATE 8DIP

IC DRIVER HALF BRDG 600MA 8-SOIC

MOSFET N-CH 75V 98A TO-263-7

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